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MMBD4448H
Document number: DS30176 Rev. 10 - 2
2 of 4
www.diodes.com
February 2011
? Diodes Incorporated
MMBD4448H
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Voltage
VR(RMS)
57 V
Forward Continuous Current (Note 3)
IFM
500 mA
Average Rectified Output Current (Note 3)
IO
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 3)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V(BR)R
80
?
V
IR
= 2.5
μA
Forward Voltage
VF
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Reverse Current (Note 4)
IR
?
100
50
30
25
nA
μA
μA
nA
VR
= 70V
VR
= 75V, T
J
= 150
°C
VR
= 25V, T
J = 150°C
VR
= 20V
Total Capacitance
CT
?
3.5 pF VR
= 6V, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns VR
= 6V, I
F
= 5mA
Notes: 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
4. Short duration pulse test used to minimize self-heating effect.
0
40 160120
80
200
T , AMBIENT TEMPERATURE (oC)A
Fig. 1 Power Derating Curve (Note 3)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
0
100
200
300
400
500
10
100
1,000
1
0.1
0
1.6
1.2
0.4
0.8
I, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
T = 125oCA
T = -40oCA
T = 75oCA
T = 25oCA
T = 0oCA
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